DocumentCode
2738821
Title
Theoretical Approach Towards Elastic Anisotropy and Strain-Induced Void Formation in Cu-Sn Crystalline Phases
Author
Chen, Jiunn ; Lai, Yi-Shao
Author_Institution
Central Labs., Adv. Semicond. Eng., Inc., Kaohsiung, Taiwan
fYear
2008
fDate
22-24 Oct. 2008
Firstpage
63
Lastpage
66
Abstract
The Cu-Sn alloys have been used since ancient times. At present they attract much interest since the formation and growth of Cu-Sn intermetallic compounds, namely, Cu3Sn and Cu6Sn5, play an important role in the kinetics of the soldering reaction in microelectronics packaging. Their formation kinetics as well as mechanical properties has shown to be crucial for the integrity of solder joints. In this work, we report elastic properties of Cu3Sn and Cu6Sn5 crystalline phases using first-principles calculations based on the density functional theory. The elastic anisotropy of these phases, which is difficult to resolve from experiments, is fully discussed. Our results show that both crystalline phases have the greatest stiffness along the c direction. In particular, Cu3Sn exhibits in-plane anisotropy, which is associated with the lattice modulation within the superstructure. We also propose a void formation mechanism based on the computed bond anisotropy of Sn-Cu and Cu-Cu in Cu3Sn.
Keywords
copper alloys; density functional theory; elasticity; soldering; tin alloys; voids (solid); CuSn; bond anisotropy; crystalline phases; density functional theory; elastic anisotropy; first-principles calculations; intermetallic compounds; lattice modulation; mechanical properties; microelectronic packaging; soldering reaction; strain-induced void formation; Anisotropic magnetoresistance; Crystallization; Density functional theory; Intermetallic; Kinetic theory; Mechanical factors; Microelectronics; Packaging; Soldering; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly & Circuits Technology Conference, 2008. IMPACT 2008. 3rd International
Conference_Location
Taipei
Print_ISBN
978-1-4244-3623-1
Electronic_ISBN
978-1-4244-3624-8
Type
conf
DOI
10.1109/IMPACT.2008.4783808
Filename
4783808
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