• DocumentCode
    2738821
  • Title

    Theoretical Approach Towards Elastic Anisotropy and Strain-Induced Void Formation in Cu-Sn Crystalline Phases

  • Author

    Chen, Jiunn ; Lai, Yi-Shao

  • Author_Institution
    Central Labs., Adv. Semicond. Eng., Inc., Kaohsiung, Taiwan
  • fYear
    2008
  • fDate
    22-24 Oct. 2008
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    The Cu-Sn alloys have been used since ancient times. At present they attract much interest since the formation and growth of Cu-Sn intermetallic compounds, namely, Cu3Sn and Cu6Sn5, play an important role in the kinetics of the soldering reaction in microelectronics packaging. Their formation kinetics as well as mechanical properties has shown to be crucial for the integrity of solder joints. In this work, we report elastic properties of Cu3Sn and Cu6Sn5 crystalline phases using first-principles calculations based on the density functional theory. The elastic anisotropy of these phases, which is difficult to resolve from experiments, is fully discussed. Our results show that both crystalline phases have the greatest stiffness along the c direction. In particular, Cu3Sn exhibits in-plane anisotropy, which is associated with the lattice modulation within the superstructure. We also propose a void formation mechanism based on the computed bond anisotropy of Sn-Cu and Cu-Cu in Cu3Sn.
  • Keywords
    copper alloys; density functional theory; elasticity; soldering; tin alloys; voids (solid); CuSn; bond anisotropy; crystalline phases; density functional theory; elastic anisotropy; first-principles calculations; intermetallic compounds; lattice modulation; mechanical properties; microelectronic packaging; soldering reaction; strain-induced void formation; Anisotropic magnetoresistance; Crystallization; Density functional theory; Intermetallic; Kinetic theory; Mechanical factors; Microelectronics; Packaging; Soldering; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly & Circuits Technology Conference, 2008. IMPACT 2008. 3rd International
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-3623-1
  • Electronic_ISBN
    978-1-4244-3624-8
  • Type

    conf

  • DOI
    10.1109/IMPACT.2008.4783808
  • Filename
    4783808