Title :
Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP
Author :
Fujiwara, Y. ; Ito, T. ; Ofuchi, H. ; Tsuchiya, J. ; Tanigawa, A. ; Tabuchi, M. ; Takeda, Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan
Abstract :
We have successfully observed radiant Er-related low-temperature photoluminescence (PL) dominated by numerous extremely sharp emission lines due to the intra-4f shell transitions of Er3+ ions in Er-doped GaP (GaP:Er) grown by OMVPE with TBP. The intensity of the emission lines depended strongly on the growth temperature, the Er concentration and the reactor pressure, indicating coexistence of various Er-related luminescence centers in the samples. The fluorescence-detected EXAFS analysis on the samples revealed clearly that the majority of Er atoms doped are substitutionally incorporated into Ga sites in the GaP lattice. Effects of In-addition to GaP:Er have also been investigated
Keywords :
EXAFS; III-V semiconductors; erbium; gallium compounds; photoluminescence; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; Er concentration; GaP:Er; OMVPE; extremely sharp Er-related luminescence; fluorescence-detected EXAFS analysis; growth temperature; intra-4f shell transitions; photoluminescence; reactor pressure; Erbium; Fluorescence; Indium tin oxide; Inductors; Lattices; Luminescence; Materials science and technology; Photoluminescence; Temperature dependence; Thermal quenching;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711615
