DocumentCode :
2738932
Title :
Building Blocks for Fluctuation Based Calculation in Single Electron Tunneling Technology
Author :
Safiruddin, Saleh ; Cotofana, Sorin ; Peper, Ferdinand ; Lee, Jia
Author_Institution :
Comput. Eng. Lab., Delft Univ. of Technol., Delft
fYear :
2008
fDate :
18-21 Aug. 2008
Firstpage :
358
Lastpage :
361
Abstract :
Fluctuations and noise are important factors interfering with the operation of devices and circuits, and this effect will become stronger as feature sizes decrease. This paper presents two building blocks for single electron tunneling (SET) circuits that are designed with signal fluctuations in mind. One of these blocks, a so-called Hub, outputs its signals to other building blocks by repeatedly offering its signals at its output terminals, and taking them back when they cannot be delivered. Based on a random scheme of signaling, the Hub requires fluctuations to drive its operation. The other building block, a Conservative Join, is designed to work in cooperation with the Hub, though it does not require fluctuations. We propose SET circuit topologies for both blocks, and analyze their behavior at a temperature of IK by computer simulations with SIMON 2.0. The two very different modes of operation in the blocks-fluctuation vs. non-fluctuating-can be accommodated by appropriately tuning circuit parameters, as we show. Utilizing these proposed topologies we then present an example of a network constructed using the two building blocks.
Keywords :
electron device noise; fluctuations; single electron devices; tunnelling; SET circuit topologies; SIMON 2.0 simulations; circuit parameters; fluctuation based calculation; noise; signal fluctuations; single electron tunneling technology; temperature 1 K; Circuit noise; Circuit optimization; Circuit topology; Computer simulation; Electrons; Fluctuations; Network topology; Signal design; Temperature; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
Type :
conf
DOI :
10.1109/NANO.2008.111
Filename :
4617093
Link To Document :
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