Title :
Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space
Author :
El-Banna, Mohammed M. ; Sabry, Yasser M. ; Fikry, W. ; Abdolkader, Tarek M. ; Omar, O.A.
Author_Institution :
Dept. of Engineering, Phy. and Math., Faculty of Eng., Ain, Shams Uni., Cairo, Egypt
Abstract :
Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium Green´s function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) is reported. The transport models were implemented in the same simulator and used to simulate near-and long-term´s targets of the ITRS for DG MOSFETs. The CMS presents the advantage of simulation time reduction without significant loss of accuracy, when sufficient number of modes is used. The computational burden is reduced by a factor of 7 comparing with RS and the percentage error in the terminal current is less than 0.2 % for the year 2017 target device of the ITRS.
Keywords :
Green´s function methods; MOSFET; coupled circuits; CMS; DG MOSFET; ITRS; NEGF; coupled-mode space; double gate MOSFET; nonequilibrium Green´s function formalism; quantum transport simulation; real space; Accuracy; Computational efficiency; Computational modeling; Equations; Logic gates; MOSFETs; Mathematical model; Non-Equilibrium Green´s Function Formalism; coupled-mode space; double-gate MOSFETs; quantum transport; real space;
Conference_Titel :
Engineering and Technology (ICET), 2012 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4673-4808-9
DOI :
10.1109/ICEngTechnol.2012.6396138
