• DocumentCode
    2739019
  • Title

    Multiscale Atomistic Simulations of High-k MOSFETs

  • Author

    Carlo, Aldo ; Maur, M. ; Sacconi, F. ; Pecchia, A. ; Povolotskyi, M. ; Penazzi, G. ; Romano, G.

  • Author_Institution
    TiberCAD - Dept. of Electron. Eng., Univ. of Rome "Tor Vergata" Rome, Rome
  • fYear
    2008
  • fDate
    18-21 Aug. 2008
  • Firstpage
    377
  • Lastpage
    378
  • Abstract
    We report on a multiscale simulation approach that includes both macroscopic drift-diffusion current model and atomistic quantum tunneling model. The models are solved together in a self-consistent way inside a single simulation package. We compare the high-K gates based on HfO2 and ZrO2 with a SiO2 gate of the same equivalent thickness and show the effect of the tunneling current on transistor performance.
  • Keywords
    MOSFET; hafnium compounds; high-k dielectric thin films; silicon compounds; tunnelling; zirconium compounds; HfO2; SiO2; ZrO2; atomistic quantum tunneling model; high-k MOSFETs; macroscopic drift-diffusion current model; multiscale atomistic simulations; tunneling current; Computational modeling; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Photonic band gap; Poisson equations; Quantum mechanics; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
  • Conference_Location
    Arlington, TX
  • Print_ISBN
    978-1-4244-2103-9
  • Electronic_ISBN
    978-1-4244-2104-6
  • Type

    conf

  • DOI
    10.1109/NANO.2008.116
  • Filename
    4617098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2739019