Compact Model of a Dual Gate CNTFET: Description and Circuit Application

We present a physical compact model of a dual gate carbon nanotube field effect transistor (DG CNTFET). To obtain an accurate and predictive model, the expression of the drain current is based on the description of the local channel potentials as well as the injected charge. The comparison between the simulation results and experiments highlights the influence of the parasitic Schottky barrier at high injection level. Hence, assuming a higher DG-CNTFET technology maturity, this predictive model allows to evaluate the performance of logic circuits in terms of reconfigurable architecture.