• DocumentCode
    2739217
  • Title

    Theoretical Analysis Of The Threshold Current Density In GaN/AlGaN n-type Modulation-doped Strained Quantum Well Lasers

  • Author

    Niwa, A. ; Ohtoshi, T. ; Kuroda, Tadahiro

  • Author_Institution
    Hitachi, Ltd
  • fYear
    1997
  • fDate
    14-18 July 1997
  • Firstpage
    287
  • Lastpage
    288
  • Keywords
    Aluminum gallium nitride; Epitaxial layers; Gallium nitride; Light emitting diodes; Optical mixing; Optical polarization; Radiative recombination; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on
  • Conference_Location
    Chiba, Japan
  • Print_ISBN
    0-7803-3889-8
  • Type

    conf

  • DOI
    10.1109/CLEOPR.1997.610987
  • Filename
    610987
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2739217