Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure

Author

Semra, L. ; Telia, A. ; Kaddeche, M. ; Soltani, A.

Author_Institution

Electronics Department, Engineering Sciences Faculty, Mentouri University of Constantine UMC, Constantine, Algeria

fYear

2012

fDate

10-11 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

In this work Al_xIn_1-xN/GaN heterostructure is considered taking into account the effects of spontaneous and piezoelectric polarizations on sheet carrier concentration versus alloy composition. It is found that piezoelectric polarization decreases from (14.8×10^-6 C/cm²) to (-5.25×10^-6 C/cm²). Lattice matching appears for alloy composition between x = 0.81 and x = 0.82 when the piezoelectric polarization vanishes. The induced polarization varies from (-14×10^-6 C/cm²) to (10.85×10^-6 C/cm²). The calculated sheet carrier concentration is 6.3×10¹², 1.73, 2.88 and 4.08×10¹³cm^-2 for alloy compositions x = 0.75, 0.80, 0.85 and 0.90 respectively. Also barrier thickness on sheet carrier concentration is studied.

Keywords

III-V semiconductors; aluminium compounds; carrier density; dielectric polarisation; gallium compounds; indium compounds; piezoelectric materials; wide band gap semiconductors; Al_xIn_1-xN-GaN; heterostructure materials; lattice matching; piezoelectric polarization; sheet carrier concentration; spontaneous polarization effects; Aluminum gallium nitride; Charge carrier density; Gallium nitride; HEMTs; Lattices; Piezoelectric polarization; AlInN; GaN; HEMT; III-nitrides; piezoelectric polarization;

fLanguage

English

Publisher

ieee

Conference_Titel

Engineering and Technology (ICET), 2012 International Conference on

Conference_Location

Cairo

Print_ISBN

978-1-4673-4808-9

Type

conf

DOI

10.1109/ICEngTechnol.2012.6396158

Filename

6396158