• DocumentCode
    2739491
  • Title

    Nano-Crossbar Arrays for Nonvolatile Resistive RAM (RRAM) Applications

  • Author

    Nauenheim, C. ; Kügeler, C. ; Rüdiger, A. ; Waser, R. ; Flocke, A. ; Noll, T.G.

  • Author_Institution
    Inst. of Solid State Res. - IFF-6, Forschungszentrum Julich GmbH, Julich
  • fYear
    2008
  • fDate
    18-21 Aug. 2008
  • Firstpage
    464
  • Lastpage
    467
  • Abstract
    We present a fast and flexible method for the fabrication of nano-crossbar arrays with a feature size of 100 nm. TiO2 is integrated and electrically characterized as the nonvolatile resistively switching material. This structure serves as a key component for the investigation of novel high density nonvolatile resistive RAM cores.
  • Keywords
    nanolithography; nanopatterning; random-access storage; semiconductor storage; titanium compounds; TiO2-Ti; device fabrication; nanocrossbar arrays; nonvolatile resistive RAM; nonvolatile resistively switching material; Circuits; Electrodes; Electron beams; Fabrication; Lithography; Nonvolatile memory; Random access memory; Read-write memory; Resists; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
  • Conference_Location
    Arlington, TX
  • Print_ISBN
    978-1-4244-2103-9
  • Electronic_ISBN
    978-1-4244-2104-6
  • Type

    conf

  • DOI
    10.1109/NANO.2008.141
  • Filename
    4617123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2739491