DocumentCode :
2739622
Title :
Hybrid III–V silicon evanescent lasers with vertical sidewalled gratings
Author :
Veerasubramanian, Venkat ; Beaudin, Guillaume ; Giguère, Alexandre ; LeDrogoff, Boris ; Aimez, Vincent ; Kirk, Andrew G.
Author_Institution :
McGill Univ., Montréal, QC, Canada
fYear :
2011
fDate :
10-12 Jan. 2011
Firstpage :
133
Lastpage :
134
Abstract :
A hybrid III-V silicon evanescent laser with sidewalled gratings as the feedback element, and having 60% waveguide confinement is proposed. The device is fabricated using e-beam lithography, and low-temperature plasma assisted direct bonding.
Keywords :
III-V semiconductors; bonding processes; diffraction gratings; distributed feedback lasers; electron beam lithography; elemental semiconductors; indium compounds; laser feedback; optical fabrication; plasma materials processing; semiconductor lasers; silicon; waveguide lasers; InP-Si; e-beam lithography; feedback element; hybrid III-V silicon evanescent lasers; low-temperature plasma assisted direct bonding; vertical sidewalled gratings; waveguide confinement; Distributed feedback devices; Gratings; Laser feedback; Laser modes; Optical waveguides; Silicon; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Winter Topicals (WTM), 2011 IEEE
Conference_Location :
Keystone, CO
Print_ISBN :
978-1-4244-8428-7
Type :
conf
DOI :
10.1109/PHOTWTM.2011.5730083
Filename :
5730083
Link To Document :
بازگشت