• DocumentCode
    2739645
  • Title

    Electron Transport in Boron Fullerenes

  • Author

    He, Haiying ; Pandey, Ravindra ; Boustani, Ihsan ; Karna, Shashi P.

  • Author_Institution
    Dept. of Phys. & Multi-scale Technol. Inst., Michigan Technol. Univ., Houghton, MI
  • fYear
    2008
  • fDate
    18-21 Aug. 2008
  • Firstpage
    500
  • Lastpage
    502
  • Abstract
    The electron transport properties of B80 fullerene is studied using first-principles density functional theory in conjunction with the Landauer-Biittiker quantum transport formalism. The electron transmission in B80 fullerene is calculated to be much higher than that in C60 fullerene in the Fermi-level region. The enhanced transmission in the B80 fullerene is attributed to its spatially extended charge distribution in delocalized bonds.
  • Keywords
    Fermi level; boron; density functional theory; fullerenes; localised states; B80; Fermi-level; Landauer-Buttiker quantum transport formalism; boron fullerenes; delocalized bonds; electron transmission; electron transport properties; first-principles density functional theory; Boron; Chemical technology; Density functional theory; Electrodes; Electrons; Gaussian processes; Geometry; Gold; Scattering; Semiconductor nanostructures;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
  • Conference_Location
    Arlington, TX
  • Print_ISBN
    978-1-4244-2103-9
  • Electronic_ISBN
    978-1-4244-2104-6
  • Type

    conf

  • DOI
    10.1109/NANO.2008.150
  • Filename
    4617132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2739645