DocumentCode
2739737
Title
Design of RTD-Based NMIN/NMAX Gates
Author
Nùñez, Juan ; Quintana, José M. ; Avedillo, María J.
Author_Institution
IMSE-CNM-CSIC, Univ. de Sevilla, Sevilla
fYear
2008
fDate
18-21 Aug. 2008
Firstpage
518
Lastpage
521
Abstract
A novel implementation of NMIN/NMAX gates based on RTDs and transistors is presented. In this paper we will derive the relations that circuit representative parameters must verify to obtain a correct behaviour by means of the principles of the Monostable-to-Multistable Logic (MML). HSPICE simulations will be used to check our theoretical results.
Keywords
SPICE; insulated gate bipolar transistors; multivalued logic circuits; nanotechnology; resonant tunnelling diodes; HSPICE simulation; RTD-based NMIN/NMAX gates; monostable-to-multistable logic; resonant tunnelling diodes; transistors; Diodes; Driver circuits; Frequency; HEMTs; Logic circuits; MODFETs; Multivalued logic; Signal processing; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location
Arlington, TX
Print_ISBN
978-1-4244-2103-9
Electronic_ISBN
978-1-4244-2104-6
Type
conf
DOI
10.1109/NANO.2008.155
Filename
4617137
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