DocumentCode
2739752
Title
TID, SEE and radiation induced failures in advanced flash memories
Author
Nguyen, D.N. ; Scheick, L.Z.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2003
fDate
21-25 July 2003
Firstpage
18
Lastpage
23
Abstract
We report on TID and SEE tests of multi-level and higher density flash memories. Standby currents and functionality tests were used to characterize the response of radiation induced failures. The radiation-induced failures can be categorized as following: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.
Keywords
error analysis; flash memories; integrated circuit reliability; integrated circuit testing; integrated memory circuits; radiation effects; SEE tests; SEU read errors; TID testing; advanced flash memories; erase failures; functionality tests; irradiation; multilevel flash memory; multiple upsets; radiation induced failures; single-event latch up; standby currents; stuck-bit read errors verified post-irradiation; write errors; Circuits; Electrons; Flash memory; Laboratories; Nonvolatile memory; Propulsion; Space missions; Testing; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2003. IEEE
Print_ISBN
0-7803-8127-0
Type
conf
DOI
10.1109/REDW.2003.1281316
Filename
1281316
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