Energy gap bowing and refractive index spectrum of AlInN and AlGaInN

Author

Piprek, J. ; Peng, T. ; Qui, G. ; Olowolafe, J.O.

Author_Institution

Coll. of Eng., Delaware Univ., Newark, DE, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

227

Lastpage

230

Abstract

High-quality polycrystalline AlInN films are deposited by low-temperature magnetron reactive sputtering. The energy band gap is measured across the entire compositional range and strong band gap bowing is observed. Within the transparency wavelength region, the effect of AlInN composition on the refractive index spectrum is strongest at shorter wavelength. Taking these measurements into account, non-linear interpolation formulas are employed to predict band gap and refractive index of quaternary AlGaInN for arbitrary compositions

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium compounds; indium compounds; optical constants; refractive index; semiconductor thin films; sputtered coatings; stoichiometry; wide band gap semiconductors; AlGaInN; AlInN; AlInN composition; band gap bowing; energy band gap; energy gap bowing; high-quality polycrystalline AlInN films; low-temperature magnetron reactive sputtering; nonlinear interpolation formulas; refractive index spectrum; transparency wavelength region; Crystallization; Energy measurement; Interpolation; Lattices; Magnetic separation; Optical films; Photonic band gap; Refractive index; Sputtering; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711623

Filename

711623