Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

Author

Dupuis, R.D. ; Grudowski, P.A. ; Eiting, C.J. ; Shmagin, I.C. ; Kolbas, R.M. ; Rosner, S.J.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

231

Lastpage

234

Abstract

We describe the optical and structural properties of InGaN multiple-quantum-well (MQW) heterostructures grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. These structures consist of In_xGa_1-xN quantum wells and In_yGa_1-yN barrier layers with GaN or AlGaN cladding layers. A comparison of the 300 K photoluminescence spectra of these samples indicates that the emission from the quantum well structure is not strongly affected by the high-temperature overlayer growth of GaN or AlGaN films. X-ray diffraction scans show superlattice peaks and indicate that the MQWs are fully strained

Keywords

III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; interface structure; internal stresses; photoluminescence; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; vapour phase epitaxial growth; wide band gap semiconductors; (0001) sapphire substrates; 300 K; AlGaN; AlGaN cladding layers; GaN; GaN cladding layers; In_xGa_1-xN quantum wells; In_yGa_1-yN barrier layers; InGaN; InGaN quantum-well heterostructures; MQW; X-ray diffraction scans; fully strained superlattice; high-temperature overlayer growth; metalorganic chemical vapor deposition; multiple-quantum-well; optical characterization; photoluminescence spectra; structural characterization; Aluminum gallium nitride; Chemical vapor deposition; Gallium nitride; Optical films; Optical superlattices; Quantum well devices; Quantum wells; Substrates; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711624

Filename

711624