DocumentCode :
2739904
Title :
A High Performance Leadframe Design For Memory Application
Author :
Kao, Hsing-da ; Chiang, Kevin ; Lai, Jeng-Yuan ; Wang, Yu-Po ; Hsiao, C.S.
Author_Institution :
Siliconware Precision Ind. Co., Ltd., Taichung
fYear :
2008
fDate :
22-24 Oct. 2008
Firstpage :
267
Lastpage :
270
Abstract :
Memory is widely used in most applications. It has the trend for larger storage and higher speed operation, but lower prices. Leadframe based package is a low cost solution for memory applications, but it always has the problem of high lead inductance. Higher power and ground pins inductance design will result in big bouncing noise and make products malfunction. Therefore, how to reduce the lead inductance is a key issue for a successful leadframe design. Traditional power and ground pins are individually arranged from inner die pad to outer leads. Here we proposed connection type leadframe design to reduce power and ground nets inductance. Wire length impact and lead width impact are included in this study. In this paper, we even discuss the impact of different gold wire diameters. According to the simulation results for all these impacts, we will come out the low inductance and resistance design guideline for designer´s reference.
Keywords :
electronics packaging; inductance; integrated circuit design; bouncing noise; ground pins; high performance leadframe design; inductance; lead width; leadframe based package; malfunction. products; memory application; power pins; resistance; wire diameters; wire length; Costs; Electric resistance; Gold; Guidelines; Inductance; Integrated circuit noise; Integrated circuit packaging; Pins; Voltage; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly & Circuits Technology Conference, 2008. IMPACT 2008. 3rd International
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3623-1
Electronic_ISBN :
978-1-4244-3624-8
Type :
conf
DOI :
10.1109/IMPACT.2008.4783862
Filename :
4783862
Link To Document :
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