Title :
Tuning the Polarity of Si-Nanowire Transistors Without the Use of Doping
Author :
Weber, Walter M. ; Geelhaar, Lutz ; Lamagna, Luca ; Fanciulli, Marco ; Kreupl, Franz ; Unger, Eugen ; Riechert, Henning ; Scarpa, Giuseppe ; Lugli, Paolo
Author_Institution :
Namlab gGmbH & Qimonda Dresden GmbH & Co. OHG, Dresden
Abstract :
In this article, a novel method of creating p- and n-type Si-NWs FETs by employing undoped NWs as the active region, is presented. This method does not require doping, but takes advantage of the inherent NW geometry and simply relies on the electrostatic control of the bands near the source- and drain- (S/D) contacts.
Keywords :
Schottky gate field effect transistors; elemental semiconductors; nanoelectronics; nanowires; semiconductor quantum wires; silicon; FET; Schottky contacts; Si; Si-undoped nanowire transistor; electrostatic control; geometry; polarity; source-drain contact; Charge carrier processes; Dielectric measurements; Doping; Electrostatics; Energy measurement; FETs; Logic; Nanoelectronics; Schottky barriers; Technological innovation;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.171
