Title :
Investigation of UTC and PIN Performance for THz Applications.
Author :
Dyson, A. ; Henning, I.D. ; Adams, M.J.
Author_Institution :
Essex Univ., Colchester
Abstract :
The operation and performance of an InGaAs/InP uni-travelling-carrier photodiode (UTC-PD) has been studied using a commercial device simulator. We compare the UTC-PD with conventional PIN photodiodes, focussing particularly on evaluating the intrinsic device performance.
Keywords :
p-i-n diodes; photodiodes; PIN photodiode performance; THz application; commercial device simulator; intrinsic device performance; uni-travelling-carrier photodiode; Bandwidth; Doping; Electrons; Indium gallium arsenide; Modeling; Optical receivers; PIN photodiodes; Photoconductivity; Stimulated emission; Systems engineering and theory;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368554
