High Current Density and Failure Mechanism in Epitaxially Bridged Silicon Nanowires

We report on the current density and failure mechanism of bridged Si nanowires epitaxially grown between single crystal Si electrodes. Nanowires were found to handle high threshold current density > 10⁵A/cm² before exponentially increasing joule heating increases the resistivity and contributes to a positive feedback loop of thermally induced failure. The physical failure at the center of the bridged nanowires is in agreement with published temperature profile along the nanowire due to Joule heating. It is also an indication of homogeneity and low contact resistance in our bridged nanowire, a desirable property in interfacing nanowires.