DocumentCode :
2740156
Title :
Towards Antiferromagnetic Metal Spintronics
Author :
Tsoi, Maxim
Author_Institution :
Phys. Dept., Univ. of Texas at Austin, Austin, TX
fYear :
2008
fDate :
18-21 Aug. 2008
Firstpage :
600
Lastpage :
600
Abstract :
Spintronics in ferromagnetic systems is built on a complementary set of phenomena in which the magnetic configuration of the system influences its transport properties and vice versa. Giant magnetoresistance (GMR) and spin transfer phenomena are typical examples of such interconnections found in ferromagnetic (F) multilayers. Recently, MacDonald and co-workers predicted that corresponding effects ought to occur in antiferromagnetic (AFM) multilayers where F components are replaced by AFMs. First, it was predicted that resistance of an AFM spin valve-here two AFM layers are separated by a nonmagnetic (N) spacer-could depend upon the relative orientations of magnetic moments in the two AFM layers (antiferromagnetic GMR). Second, injection of a strong enough current density into an antiferromagnet was predicted to affect its magnetic state; in particular, they predicted current-driven variations in exchange bias in F/AFM metal pairs. These new AFM effects may potentially lead to a new all-antiferromagnetic spintronics where antiferromagnets are used in place of ferromagnets. We and others have recently provided experimental evidence of current-driven effects on exchange bias at F/AFM interfaces. This talk will focus upon our experiments which demonstrated for the first time that the exchange bias is affected by an electrical current of high density (~1012 A/m2) flowing across the F/AFM interface. We find that, depending on the polarity of the current, the strength of the exchange bias can either increase or decrease. To explain our findings we exploit the theoretical prediction that the current mediates the transfer of spin angular momentum to AFM metal and generates a torque on its magnetic moments. Such a current-mediated variation of exchange bias could be used to control the magnetic state of spin-valve devices, e.g., in magnetic memory applications. I will also discuss our search for antiferromagnetic GMR in systems containing two AFMs separa- - ted by a non-magnetic (N) metal spacer.
Keywords :
antiferromagnetic materials; current density; exchange interactions (electron); ferromagnetic materials; giant magnetoresistance; magnetic moments; magnetic multilayers; magnetic storage; magnetoelectronics; spin valves; AFM; GMR; antiferromagnetic metal spintronics; antiferromagnetic multilayers; current density; ferromagnetic multilayers; giant magnetoresistance; magnetic memory applications; magnetic moments; magnetic state; spin angular momentum; spin transfer; spin valve; spin-valve devices; torque; transport properties; Antiferromagnetic materials; Current density; Giant magnetoresistance; Magnetic devices; Magnetic moments; Magnetic multilayers; Magnetic properties; Magnetic separation; Magnetoelectronics; Torque;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
Type :
conf
DOI :
10.1109/NANO.2008.178
Filename :
4617160
Link To Document :
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