DocumentCode :
2740273
Title :
Variability in measured SEE sensitivity associated with design and fabrication iterations
Author :
Koga, R. ; Crain, S. ; George, J. ; LaLumondiere, S. ; Crawford, K. ; Yu, P. ; Tran, V.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
fYear :
2003
fDate :
21-25 July 2003
Firstpage :
77
Lastpage :
82
Abstract :
SEE sensitivity variabilities emerge in microcircuit design iterations and fabrication changes. They encompass various types of SEE. While some SEE sensitivity variabilities remain acceptable, others are not tolerated for space applications.
Keywords :
DRAM chips; flash memories; integrated circuit manufacture; radiation effects; SEE sensitivity variability; die shrinkage; dynamic random access memory; linear energy transfer; microcircuit design iterations; microcircuit fabrication iterations; single event effects; single event latchup; space applications; Automatic testing; Computer errors; Cyclotrons; Decoding; Fabrication; Manufacturing; Object recognition; Particle beams; Random access memory; Single event upset;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2003. IEEE
Print_ISBN :
0-7803-8127-0
Type :
conf
DOI :
10.1109/REDW.2003.1281348
Filename :
1281348
Link To Document :
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