• DocumentCode
    2740316
  • Title

    Error-Model Driven Analysis of Quantum Circuits Reliability

  • Author

    Boncalo, Oana ; Udrescu, Mihai ; Prodan, Lucian ; Vladutiu, Mircea ; Amãricãi, Alexandru

  • Author_Institution
    Comput. Sci. & Eng. Dept., "Politeh." Univ. of Timisoara, Odense
  • fYear
    2008
  • fDate
    18-21 Aug. 2008
  • Firstpage
    625
  • Lastpage
    628
  • Abstract
    This paper presents a flexible VHDL simulation framework, meant to analyze the link between the adopted noise model and the quantum circuit fidelity. The key ingredient is the use of fault injection components (i.e. mutants and saboteurs), which are tailored according to the noise model. The evaluation of quantum fault tolerant (FT) schemes is dominated by analytical studies, mostly restricted to independent probabilistic faults. The model adopted herein addresses general noise, which includes: probabilistic faults, amplitude errors, depolarization, amplitude damping, and phase damping. This way, we show that a rigorous CAD analysis for lower levels of FT schemes can be performed. The results can then be used to tune up simulation or analytical parameters for the higher levels. The target of our simulations is a particular quantum network, responsible for generating and verifying the encoded ancilla state |0rangF .
  • Keywords
    CAD; fault tolerance; hardware description languages; integrated circuit reliability; CAD analysis; amplitude damping; amplitude errors; depolarization; error model driven analysis; fault injection components; flexible VHDL simulation; independent probabilistic faults; phase damping; quantum circuits reliability; quantum fault tolerant schemes; Analytical models; Circuit analysis; Circuit faults; Circuit noise; Circuit simulation; Damping; Error analysis; Fault tolerance; Flexible printed circuits; Independent component analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
  • Conference_Location
    Arlington, TX
  • Print_ISBN
    978-1-4244-2103-9
  • Electronic_ISBN
    978-1-4244-2104-6
  • Type

    conf

  • DOI
    10.1109/NANO.2008.187
  • Filename
    4617169