• DocumentCode
    2740366
  • Title

    The Effect of Size Distribution on the Switching Field Distribution of Co/Pd Multilayered Nanostructure Arrays

  • Author

    Smith, Darren ; Rantschler, James ; Ruchhoeft, Paul ; Khizroev, Sakhrat ; Litvinov, Dmitri

  • Author_Institution
    Center for Nanomagnetic Syst., Houston Univ., Houston, TX
  • fYear
    2008
  • fDate
    18-21 Aug. 2008
  • Firstpage
    633
  • Lastpage
    634
  • Abstract
    We use Ion Beam Proximity Lithography (IBPL) to produce 4 mm times 4 mm arrays of 220 nm dots in perpendicularly - oriented Co/Pd multilayered media. IBPL is used to reduce the size distribution sigmaD of the arrays, and subsequently He+ ion irradiation is used to reduce their anisotropy. The switching field distribution sigmaHcr/HCr is measured for each sample before and after irradiation, and a linear relationship is experimentally found between sigmaHcr/HCr and sigmaD. We argue that the slope of the line is due to the self-demagnetization effect of individual dots (and therefore, it is not strictly a line) and that the intercept of the line is inversely proportional to the permeability of the nanostructured material.
  • Keywords
    cobalt; ion beam lithography; magnetic anisotropy; magnetic multilayers; magnetic permeability; magnetic switching; nanostructured materials; palladium; proximity effect (lithography); quantum dots; size effect; sputter deposition; Co-Pd; Co-Pd multilayered nanostructure arrays; ion beam proximity lithography; permeability; quantum dots; self-demagnetization effect; size 220 nm; size distribution effects; switching field distribution; Anisotropic magnetoresistance; Ion beams; Lithography; Magnetic anisotropy; Magnetic materials; Magnetic multilayers; Magnetic switching; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Saturation magnetization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
  • Conference_Location
    Arlington, TX
  • Print_ISBN
    978-1-4244-2103-9
  • Electronic_ISBN
    978-1-4244-2104-6
  • Type

    conf

  • DOI
    10.1109/NANO.2008.190
  • Filename
    4617172