Title :
Architecture of SOI transistors: what´s next?
Author :
Cristoloveanu, Sorn
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
The long but successful efforts of the silicon-on-insulator (SOI) community have eventually put SOI in the microelectronics roadmap. It is frequently stated that SOI is capable of expanding the predictable frontiers of bulk-silicon technology. It is even speculated that SOI transistors will be the unique survivors of the CMOS world. For this promise to materialize, both `evolutionary´ and `revolutionary´ solutions are necessary. This two-fold approach is tentatively addressed in this paper
Keywords :
CMOS integrated circuits; MOSFET; silicon-on-insulator; technological forecasting; CMOS; SOI microelectronics; SOI technology; SOI transistor architecture; SOI transistors; Si-SiO2; bulk-silicon technology; silicon-on-insulator; CMOS technology; Computer hacking; Doping; Insulation; Isolation technology; MOSFET circuits; Semiconductor films; Silicon; Substrates; Transistors;
Conference_Titel :
SOI Conference, 2000 IEEE International
Conference_Location :
Wakefield, MA
Print_ISBN :
0-7803-6389-2
DOI :
10.1109/SOI.2000.892741
