Title :
Single-event effects test results of 512MB SDRAMs
Author :
Langley, T. ; Koga, R. ; Morris, T.
Author_Institution :
SEAKR Eng. Inc., Centennial, CO, USA
Abstract :
Single-event effect test results of new 512MB SDRAMs are reported in this paper. Effects characterized during testing include single-event upset, single-event latchup, and single-event functional interrupt. Upset cross-sections are compared with radiation test results of earlier generation SDRAMs as a feasibility assessment for use of these new technologies.
Keywords :
DRAM chips; integrated circuit testing; radiation effects; 512 MB; SDRAM; SEE test results; feasibility assessment; radiation test results; single-event effects; single-event functional interrupt; single-event latchup; single-event upset; synchronous dynamic random access memory; upset cross-sections; Aerospace testing; Cyclotrons; Performance evaluation; Protons; Radiation effects; SDRAM; Single event upset; Space technology; System testing; Telephony;
Conference_Titel :
Radiation Effects Data Workshop, 2003. IEEE
Print_ISBN :
0-7803-8127-0
DOI :
10.1109/REDW.2003.1281355
