• DocumentCode
    2740438
  • Title

    SOI at IBM: current status of technology, modeling, design, and the outlook for the 0.1 μm generation

  • Author

    Assaderaghi, Fari ; Shahidi, Ghavam

  • Author_Institution
    Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    6
  • Lastpage
    9
  • Abstract
    This paper reviews the evolution of partially depleted (PD) CMOS SOI technology at IBM. Several aspects of this development leading to successful fabrication of high-performance microprocessors are discussed. They include SOI-specific device design and process modifications; creation of compact device models for circuit simulation (SPICE-like models); and development of circuit styles and strategies employed in the design of CMOS VLSI on PD SOI. Since these strategies address issues and problems that arise on PD SOI circuits such as delay hysteresis, and noise margin reduction, they are discussed in detail. The discussion is focused on the 0.18 μm and 0.13 μm generations, with some deliberations on the 0.10 μm node
  • Keywords
    CMOS integrated circuits; SPICE; VLSI; circuit simulation; delays; hysteresis; integrated circuit modelling; integrated circuit noise; integrated circuit technology; microprocessor chips; silicon-on-insulator; 0.1 micron; 0.13 micron; 0.18 micron; IBM; PD SOI CMOS VLSI design; PD SOI circuits; SOI; SOI design; SOI modeling; SOI technology; SOI-specific device design; SOI-specific process modifications; SPICE-like models; Si-SiO2; circuit simulation; circuit styles; compact device models; delay hysteresis; design strategies; microprocessors; noise margin reduction; partially depleted CMOS SOI technology; technology generations; CMOS process; CMOS technology; Circuit simulation; Delay; Fabrication; Hysteresis; Microprocessors; Process design; Semiconductor device modeling; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2000 IEEE International
  • Conference_Location
    Wakefield, MA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-6389-2
  • Type

    conf

  • DOI
    10.1109/SOI.2000.892743
  • Filename
    892743