• DocumentCode
    2740487
  • Title

    Catastrophic SEE in high-voltage power MOSFETs

  • Author

    Selva, L.E. ; Scheick, L.Z. ; McClure, S. ; Miyahira, T. ; Guertin, S.M. ; Shah, S.K. ; Edmonds, L.D. ; Patterson, D.

  • fYear
    2003
  • fDate
    21-25 July 2003
  • Firstpage
    113
  • Lastpage
    120
  • Abstract
    Heavy ion irradiation of high-voltage power MOSFETs with long-range ions (>123μm in silicon) was performed using 14, 19, 22, 24, 28, and 39 MeV-cm2/mg ions at normal incidence. Prior to catastrophic failure some DUTs exhibited unusual electrical characteristic: all devices demonstrated high current transients (or current spikes) at voltages significantly lower than the voltage at which the devices failed.
  • Keywords
    ion beam effects; power MOSFET; catastrophic SEE; catastrophic failure; current spikes; device failure; electrical characteristics; heavy ion irradiation; high current transients; high-voltage power MOSFET; power field effects transistor; radiation testing; single event effect; space missions; Doping; Laboratories; MOSFETs; NASA; Power engineering and energy; Propulsion; Space technology; Telephony; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2003. IEEE
  • Print_ISBN
    0-7803-8127-0
  • Type

    conf

  • DOI
    10.1109/REDW.2003.1281360
  • Filename
    1281360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2740487