Title :
Correlation between proton and heavy-ion SEUs in commercial memory devices
Author :
Chiba, Kenichi ; Nashiyama, Isamu ; Sugimoto, Kenji ; Nemoto, Norio ; Asai, Hiroaki ; Iide, Yoshiya ; Shindo, Hiroyuki ; Ikeda, Naomi ; Kuboyama, Satoshi ; Matsuda, Sumio
Author_Institution :
Dept. of Eng., HIREC, Tsukuba, Japan
Abstract :
Proton and heavy-ion SEU testing are performed on commercial 4 M bit-SRAMs and 64M bit-DRAMs. Correlation between proton and heavy-ion SEUs is examined and an empirical equation has been derived between proton SEU cross-section and heavy-ion threshold-LET.
Keywords :
DRAM chips; SRAM chips; integrated circuit testing; proton effects; 4 Mbit; 64 Mbit; DRAM; SEU cross-section; SEU testing; SRAM; commercial memory devices; commercial-off-the-shelf; dynamic random access memory; heavy-ion SEU; heavy-ion threshold-LET; proton SEU; radiation tolerance; single event upset; static random access memory; Costs; Equations; Manufacturing processes; Performance evaluation; Production; Protons; Single event transient; Single event upset; Space technology; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2003. IEEE
Print_ISBN :
0-7803-8127-0
DOI :
10.1109/REDW.2003.1281363
