Title :
Terahertz Donor and Raman Silicon Lasers
Author :
Pavlov, S.G. ; Hubers, H.W. ; Hovenier, J.N. ; Klaassen, T.O. ; Carder, D.A. ; Phillips, P.J. ; Redlich, B. ; Riemann, H. ; Abrosimov, N.V. ; Notzel, N. ; Zhukavin, R.Kh. ; Shastin, V.N.
Author_Institution :
Inst. of Planetary Res., Berlin
Abstract :
Under optical pumped by mid-infrared lasers, silicon crystals doped by group-V donor centers reveal stimulated emission in terahertz range. Different features of the population inversion mechanisms in the silicon lasers allow covering the frequency range from 1 to 7 THz with a few tenths of mW pulse peak powers at low lattice temperatures.
Keywords :
Raman lasers; semiconductor lasers; silicon; Raman silicon lasers; frequency 1 THz to 7 THz; group-V donor centers; mid-infrared lasers; population inversion; silicon crystals; stimulated emission; terahertz donor; Crystals; Frequency; Laser excitation; Lattices; Optical pulses; Optical pumping; Power lasers; Pump lasers; Silicon; Stimulated emission;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368591
