DocumentCode :
2740775
Title :
Structural and device properties of DFB-LD with lateral undulation of SL-MQW
Author :
Kim, Hyung Mun ; Kim, Jeong Soo ; Oh, Dae Kon ; Choo, Heung Ro ; Kim, Hong Man ; Pyun, Kwang Eui
Author_Institution :
Optoelectron. Sect., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fYear :
1997
fDate :
8-11 Sep 1997
Firstpage :
255
Lastpage :
258
Abstract :
The InGaAsP/InGaAs strained-layer multiple quantum well (SL-MQW) structures for 1.3 μm or 1.55 μm distributed feedback laser diodes (DFB-LD) have been grown by low-pressure metalorganic vapor phase epitaxy. We observed the lateral undulation or deformation of SL-MQW grown on sawtooth-patterned substrates before the fabrication of DFB-LD, and it was dependent upon the initial growth conditions, AsH3 partial pressure and heat-up time, prior to the 1st active layer growth. It is mainly due to the excess accumulation of strain in a given growth condition. The structural qualities of SL-MQW are analyzed in-depth using DCXRC, PL, TEM, SEM, and OM. We will discuss the effect of undulation or deformation on the device properties, such as I-V, I-L, differential quantum efficiency, internal loss, and characteristic temperature
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; interface structure; optical losses; photoluminescence; quantum well lasers; scanning electron microscopy; semiconductor growth; semiconductor superlattices; transmission electron microscopy; vapour phase epitaxial growth; 1.3 mum; 1.55 mum; AsH3 partial pressure; DCXRC; DFB-LD; I-V characteristics; InGaAsP-InGaAs; InGaAsP/InGaAs strained-layer multiple quantum well; PL; SEM; SL-MQW; TEM; active layer growth; characteristic temperature; deformation; device properties; differential quantum efficiency; distributed feedback laser diodes; heat-up time; initial growth conditions; internal loss; lateral undulation; low-pressure metalorganic vapor phase epitaxy; sawtooth-patterned substrates; structural properties; Ash; Capacitive sensors; Diode lasers; Distributed feedback devices; Epitaxial growth; Indium phosphide; Optical device fabrication; Quantum well devices; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
Type :
conf
DOI :
10.1109/ISCS.1998.711629
Filename :
711629
Link To Document :
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