Dielectric properties of boron nitride after high-temperature implantation with ions

Ion-heat modification in different regimes allow to adjust the surface resistivity ρ_s of inorganic dielectrics from 10¹⁵ to 10³ Ω/. The surface property changes depend on annealing temperature T_an and irradiation temperature T_i. The energetic characteristics of conduction σ_s and its stability in oxygen-contained media after irradiation of boron nitride (θ=(1-2)·10¹⁷ C⁺/cm², T_i=300-1200 K) and subsequent annealing (P ≤10 P_a, T_an = 300-2000 K) were investigated. The T_i growth enlarge ρ_s(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after post-implantation annealing. The stable properties are formed after T_i< 1000 K, T_an = 900-1200 K and/or T_i>500 K, T_an = 1700-1750 K. Electron transport dominate at σ_s≥10⁹ S/. However Fermi level shift develop to conduction band less compare with T_i<500 K, σ_s≥10^-4 S/. Holes conduction realised for weakly conductive surface at σ_s≥10^-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σ_s(E) are fixed at T>1200 K. The feature of high-temperature implantation has lower sensibility of surface to the influence of oxygen-contained reagents owing to the formation of stable defects.