Title :
Silicon THz Lasers Performance Under Uniaxial Stress
Author :
Zhukavin, R.Kh. ; Pavlov, S.G. ; Hubers, Heinz-Wilhelm ; Kovalevsky, K.A. ; Tsyplenkov, V.V. ; Shastin, V.N.
Author_Institution :
Russian Acad. of Sci., Nizhny Novgorod
Abstract :
The experimental results of uniaxial stress study of optically pumped THz silicon lasers are presented. The uniaxial stress leads to the shift of pairs of valleys with respect to each other that, in turn, affects the intervalley scattering and causes changing of the lifetimes of principal states. The experiments carried out have shown considerable (10 times) decrease of pump threshold for Si:P and Si:Sb and change of emission frequency for Si:As and Si:Bi.
Keywords :
antimony; arsenic; bismuth; optical pumping; phosphorus; semiconductor lasers; silicon compounds; submillimetre wave lasers; Si:As; Si:Bi; Si:P; Si:Sb; optical pumped lasers; semiconductor laser; silicon THz lasers; terahertz laser; uniaxial stress; Frequency; Laser excitation; Laser theory; Laser transitions; Optical pumping; Optical scattering; Physics; Pump lasers; Silicon; Stress;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368601
