Title :
Modeling and fabrication of vertical pillar MOSFETs made in recrystallized Si
Author :
Cho, Hyun-Jin ; Plummer, James D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
We report a simple analytical model for vertical pillar MOSFETs including bulk traps. The model predicts that the threshold voltage increases as the trap density increases. The analytical solution yields good agreement with MEDICI simulations confirming the model. The model is used to evaluate the electrical characteristics of devices previously fabricated (Cho et al, Symp. VLSI Tech., p. 31, 1999)
Keywords :
MOSFET; electron traps; elemental semiconductors; hole traps; recrystallisation; semiconductor device measurement; semiconductor device models; silicon; MEDICI simulations; MOSFET fabrication; Si; analytical model; bulk traps; electrical characteristics; modeling; recrystallized Si; threshold voltage; trap density; vertical pillar MOSFETs; Analytical models; Doping; FETs; Fabrication; MOSFETs; Medical simulation; Poisson equations; Predictive models; Silicon; Threshold voltage;
Conference_Titel :
SOI Conference, 2000 IEEE International
Conference_Location :
Wakefield, MA
Print_ISBN :
0-7803-6389-2
DOI :
10.1109/SOI.2000.892764
