Title :
XSTM characterization of GaSb/InAs heterojunctions: observation of white noise in the interface roughness spectrum
Author :
Harper, J. ; Weimer, M. ; Zhang, D. ; Lin, C.-H. ; Pei, S.S.
Author_Institution :
Dept. of Phys., Texas A&M Univ., College Station, TX, USA
Abstract :
We report the appearance of a white-noise component in the anion roughness spectrum of the GaSb/InAs interface under MBE growth conditions routinely employed for type-II quantum well and interband cascade lasers. Real-space imaging with cross-sectional scanning tunneling microscopy (XSTM) reveals that the white-noise power due to anion cross incorporation within the layers (As in GaSb and Sb in InAs) is less than the white-noise background appearing in the roughness spectrum, indicating an excess of interface defects
Keywords :
III-V semiconductors; crystal defects; gallium compounds; indium compounds; interface structure; molecular beam epitaxial growth; scanning tunnelling microscopy; semiconductor growth; semiconductor heterojunctions; white noise; GaSb-InAs; GaSb/InAs heterojunctions; MBE growth conditions; XSTM; anion roughness spectrum; cross-sectional scanning tunneling microscopy; interband cascade lasers; interface defects; interface roughness spectrum; real-space imaging; roughness spectrum; type-II quantum well; white noise; Epitaxial growth; Gallium arsenide; Gas lasers; Heterojunctions; Optical materials; Physics; Quantum well lasers; Tunneling; Valves; White noise;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711630
