Improving Electrical Properties of ZnO Thin Films by the Combination of Plasma Treatment, Post-Annealing and Doping

Author

Shie, Tsai-Yuan ; Lin, Ching-Fuh

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei

fYear

2008

fDate

18-21 Aug. 2008

Firstpage

756

Lastpage

759

Abstract

The effect of Ar plasma and post-annealing on the electrical properties of undoped and Al-doped ZnO films deposited on glass substrates using the sol-gel spin-coating technique are investigated. The surface morphology of ZnO thin films shows that the grain boundaries of ZnO grains become indistinct after plasma treatment. With the appropriate processing sequence, the resistivity of ZnO thin films decreases significantly to the order of 10^-3.

Keywords

II-VI semiconductors; aluminium; annealing; doping; electrical resistivity; grain boundaries; plasma materials processing; semiconductor thin films; sol-gel processing; spin coating; surface morphology; wide band gap semiconductors; zinc compounds; ZnO:Al; aluminium doping; electrical property; electrical resistivity; glass substrates; grain boundary; plasma treatment; post-annealing; sol-gel spin-coating; surface morphology; zinc oxide thin films; Argon; Doping; Glass; Grain boundaries; Plasma materials processing; Plasma properties; Surface morphology; Surface treatment; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Conference_Location

Arlington, TX

Print_ISBN

978-1-4244-2103-9

Electronic_ISBN

978-1-4244-2104-6

Type

conf

DOI

10.1109/NANO.2008.226

Filename

4617208