Ballistic electron transport in semiconductor superlattices

Author

Strasser, G. ; Rauch, C. ; Kempa, K. ; Gornik, E.

Author_Institution

Dept. of Solid State. Electron., Tech. Univ. Wien, Austria

fYear

1997

fDate

8-11 Sep 1997

Firstpage

267

Lastpage

270

Abstract

An investigation of the electric field dependent transport through superlattice and multiple superlattice minibands is presented. A decrease of the miniband transmission with increasing electric field is observed in agreement with the results of a calculation based on a transfer matrix method. This observed behavior gives direct evidence for coherent transport through an undoped and biased GaAs/AlGaAs superlattice. The transconductance in `broken gap´ superlattices is used to probe interminiband transition rates above and below the optical phonon frequency

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high field effects; semiconductor superlattices; GaAs-AlGaAs; ballistic electron transport; coherent transport; miniband transmission; multiple superlattice minibands; optical phonon frequency; semiconductor superlattices; transconductance; transfer matrix method; Current measurement; Educational institutions; Electron beams; Gallium arsenide; Laser sintering; Physics; Probes; Quantum mechanics; Semiconductor superlattices; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711632

Filename

711632