Title :
Band offsets in near-GaAs alloys
Author :
Whitaker, M.F. ; Dunstan, D.J. ; Hopkinson, M.
Author_Institution :
Dept. of Phys., London Univ., UK
Abstract :
We determine the band offset ratio of GaAs/GaXAs heterostructures, where X is any alloying element (e.g. In, Al, P, Sb), by studying GaXAs/AlGaAs superlattices. Photoluminescence is measured at both ambient and high pressure from GaAs and GaXAs quantum wells and this yields the band offset ratio of the GaXAs/GaAs interface. To confirm the technique, the band offset ratio of GaAs/AlGaAs is determined in this paper using this general method, and the result agrees well with previously published data obtained more directly
Keywords :
III-V semiconductors; energy gap; gallium arsenide; photoluminescence; semiconductor quantum wells; semiconductor superlattices; GaAs-AlGaAs; band gaps; band offset ratio; heterostructures; photoluminescence; quantum wells; Alloying; Argon; Artificial intelligence; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Physics; Pressure measurement; Superlattices;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711635
