• DocumentCode
    2741174
  • Title

    Terahertz Negative Differential Conductivities in Bulk GaAs

  • Author

    Zhu, Y.M. ; Sekine, N. ; Unuma, T. ; Hirakawa, K.

  • Author_Institution
    Univ. of Tokyo, Tokyo
  • fYear
    2006
  • fDate
    18-22 Sept. 2006
  • Firstpage
    413
  • Lastpage
    413
  • Abstract
    Intrinsic dynamical conductivity spectra of GaAs have been determined from time-domain terahertz waveforms emitted from undoped bulk GaAs photoexcited by femtosecond laser pulses under strong bias electric fields. The cutoff frequency for the negative differential conductivities due to intervalley transfer gradually increases with increasing electric field and reaches ~800 GHz at 50 kV/cm. The temperature dependence of the cutoff frequency indicates that it is governed by the energy relaxation process of electrons from the L-to the Gamma-valley via successive optical phonon emission.
  • Keywords
    III-V semiconductors; gallium arsenide; high-frequency effects; phonon spectra; photoexcitation; submillimetre wave spectra; time resolved spectra; GaAs; energy relaxation process; femtosecond laser pulse; intrinsic dynamical conductivity spectra; optical phonon emission; photoexcitation; terahertz negative differential conductivities; time-domain terahertz waveform; Conductivity; Cutoff frequency; Electron emission; Electron optics; Gallium arsenide; Laser beam cutting; Optical pulses; Temperature dependence; Time domain analysis; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0400-2
  • Electronic_ISBN
    1-4244-0400-2
  • Type

    conf

  • DOI
    10.1109/ICIMW.2006.368621
  • Filename
    4222355