DocumentCode
2741231
Title
Study of THz Radiation Intensity Generating from GaAs Dipole Antenna
Author
Shi, Wei ; Hou, Lei
Author_Institution
Xi´´an Univ. of Technol., Xi´´an
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
417
Lastpage
417
Abstract
We make out the time domain waveforms of THz radiation in both near field and far field generated by a GaAs dipole antenna by simulation based on the current surge model. The influences of current carrier lifetime and mobility on THz radiation intensity were discussed.
Keywords
III-V semiconductors; carrier lifetime; carrier mobility; dipole antennas; gallium arsenide; submillimetre wave antennas; submillimetre wave generation; GaAs; GaAs dipole antenna; THz radiation intensity; carrier lifetime; carrier mobility; current surge model; time domain waveforms; Antenna measurements; Charge carrier lifetime; Current measurement; Dipole antennas; Erbium; Gallium arsenide; Near-field radiation pattern; Physics; Surges; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368625
Filename
4222359
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