Title :
Fourier transform infrared spectroscopy (FTIR), SIMS and Raman scattering of heavily carbon doped MOCVD grown In0.53Ga0.47As
Author :
Sibai, A. ; Ducroquet, F. ; Hong, K. ; Cui, D. ; Pavlidis, D.
Author_Institution :
INSA, CNRS, Villeurbanne, France
Abstract :
InGaAs layers were grown on InP substrates by MOCVD using CBr4 sources and 3×1019 cm-3 doping was achieved upon annealing and de-passivation from hydrogen. The impact of annealing was investigated by FTIR, SIMS and Hall measurements. The results show the presence of the H-(CAs) 2 complex and a loss of hydrogen upon annealing which is estimated to be ~33% by FTIR and ~50% by SIMS. These results are consistent considering the fact that FTIR refers only to C-H bonds. In and As variations near the surface and some carbon concentration variation upon annealing is also reported
Keywords :
Fourier transform spectra; Hall effect; III-V semiconductors; MOCVD; Raman spectra; annealing; bonds (chemical); carbon; gallium arsenide; heavily doped semiconductors; hydrogen; indium compounds; infrared spectra; passivation; secondary ion mass spectra; semiconductor doping; semiconductor growth; semiconductor thin films; C-H bonds; CBr4 source; FTIR; Fourier transform infrared spectroscopy; H-(CAs)2 complex; Hall measurements; In0.53Ga0.47As:C,H; InGaAs layers; InP substrates; Raman scattering; SIMS; annealing; carbon concentration; de-passivation; doping; heavily carbon doped MOCVD grown In0.53Ga0.47As; hydrogen; surface; Annealing; Atomic layer deposition; Doping; Fourier transforms; Hydrogen; Indium gallium arsenide; Infrared spectra; MOCVD; Neural networks; Scattering;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711643
