• DocumentCode
    2741293
  • Title

    Raman spectroscopy of InAs1-xSbx/InSb and InAs1-xSbx/InAs superlattices, under hydrostatic pressure

  • Author

    Webb, S.J. ; Stradling, R.A. ; Nagata, K.

  • Author_Institution
    Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK
  • fYear
    1997
  • fDate
    8-11 Sep 1997
  • Firstpage
    315
  • Lastpage
    318
  • Abstract
    The high pressure phase transitions of InAs1-xSbx /InSb and InAs1-xSbx/InAs superlattices are investigated using Raman spectroscopy. Both component layers of the superlattices undergo a phase transition at the same pressure. In the InAs1-xSbx/InAs system, this pressure is the same as that of bulk InAs, independent of the Sb content of the alloy layer. In the InAs1-xSbx/InSb system, the transition pressure is either that of the InAs1-xSbx alloy, or it is the mean of the transition pressures of both constituent layers. The mechanisms which could cause the differences in transition pressures are discussed
  • Keywords
    III-V semiconductors; Raman spectra; high-pressure solid-state phase transformations; indium compounds; semiconductor superlattices; InAs1-xSbx/InAs superlattices; InAs1-xSbx/InSb superlattices; InAsSb-InAs; InAsSb-InSb; Raman spectroscopy; Sb content; high pressure phase transitions; hydrostatic pressure; transition pressures; Frequency; Intrusion detection; Lattices; Molecular beam epitaxial growth; Optical superlattices; Optical surface waves; Physics; Raman scattering; Spectroscopy; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 1997 IEEE International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7503-0556-8
  • Type

    conf

  • DOI
    10.1109/ISCS.1998.711644
  • Filename
    711644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2741293