Title :
Raman spectroscopy of InAs1-xSbx/InSb and InAs1-xSbx/InAs superlattices, under hydrostatic pressure
Author :
Webb, S.J. ; Stradling, R.A. ; Nagata, K.
Author_Institution :
Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
The high pressure phase transitions of InAs1-xSbx /InSb and InAs1-xSbx/InAs superlattices are investigated using Raman spectroscopy. Both component layers of the superlattices undergo a phase transition at the same pressure. In the InAs1-xSbx/InAs system, this pressure is the same as that of bulk InAs, independent of the Sb content of the alloy layer. In the InAs1-xSbx/InSb system, the transition pressure is either that of the InAs1-xSbx alloy, or it is the mean of the transition pressures of both constituent layers. The mechanisms which could cause the differences in transition pressures are discussed
Keywords :
III-V semiconductors; Raman spectra; high-pressure solid-state phase transformations; indium compounds; semiconductor superlattices; InAs1-xSbx/InAs superlattices; InAs1-xSbx/InSb superlattices; InAsSb-InAs; InAsSb-InSb; Raman spectroscopy; Sb content; high pressure phase transitions; hydrostatic pressure; transition pressures; Frequency; Intrusion detection; Lattices; Molecular beam epitaxial growth; Optical superlattices; Optical surface waves; Physics; Raman scattering; Spectroscopy; Substrates;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711644
