Title :
Phase Shift in Far-Infrared/Terahertz Resonant Cavity Enhanced Mirrors
Author :
Xu, M. ; Zhang, Y.H. ; Shen, W.Z.
Author_Institution :
Shanghai Jiao Tong Univ., Shanghai
Abstract :
The undoped/doped GaAs structures have shown successfully in the reflectivity of far-infrared (FIR)/terahertz (THz) resonant cavity enhanced (RCE) mirrors, but failed to yield matched phase shift, which has been obtained under resonance condition by sacrificing the reflectivity. Further increase of reflectivity may be realized by employing Au film on the bottom of the mirror.
Keywords :
III-V semiconductors; cavity resonators; gallium arsenide; gold; infrared detectors; mirrors; reflectivity; submillimetre wave detectors; GaAs-Au; far-infrared resonant cavity enhanced mirrors; phase shift; reflectivity characteristic; terahertz resonant cavity enhanced mirrors; Absorption; Detectors; Finite impulse response filter; Gold; Mirrors; Optical films; Physics; Reflectivity; Resonance; Semiconductor films;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368629
