DocumentCode :
2741374
Title :
Fabrication and characterization of Cu(In,Ga)Se2 thin-film solar cells prepared via a solution process
Author :
Wu, Chung-Hsien ; Lu, Chung-Hsin
Author_Institution :
Dept. of Chem. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Cu(In,Ga)Se2 films with a chalcopyrite structure have been successfully synthesized via a solution process in this study. Well-crystallized Cu(In,Ga)Se2 films were obtained after selenization in a tube furnace. The prepared films were characterized via X-ray diffraction and scanning electron microscopy analysis. The current-voltage characteristics of the Cu(In,Ga)Se2 solar cells were measured under AM 1.5 global spectrum. The Cu/(Ga+In) ratios affected the crystallinity, morphology and grain size of the prepared films. It was also found that the compositions of the prepared films had great influence on the efficiency of the solar cells. In addition, the effects of selenization temperatures and duration on the morphology were discussed. Increasing the selenization temperature and duration led to the enhancement of the grain size and crystallinity of the Cu(In,Ga)Se2 films.
Keywords :
III-VI semiconductors; X-ray diffraction; copper alloys; gallium compounds; grain size; indium compounds; scanning electron microscopy; semiconductor thin films; solar cells; AM 1.5 global spectrum; Cu(InGa)Se2; X-ray diffraction; chalcopyrite structure; current-voltage characteristics; grain size; scanning electron microscopy analysis; selenization temperature; solution process; thin film solar cells fabrication; tube furnace; Atomic layer deposition;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5614669
Filename :
5614669
Link To Document :
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