Title :
MOCVD growth of InGaN multiple quantum well LEDs and laser diodes
Author :
Mack, M.P. ; Abare, A.C. ; Kozodoy, P. ; Hanson, M. ; Keller, S. ; Mishra, U.K. ; Coldren, L.A. ; DenBaars, Steven P.
Abstract :
The MOCVD growth of InGaN/GaN multiple quantum well (MQW) structures for blue LEDs and lasers has been investigated. (1) The structural and optical properties of the layers have been characterized by X-ray diffraction and photoluminescence. (2) By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 mA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. (3) Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with threshold current densities as low as 19 kA/cm2 were observed for 5×800 μm2 lasers with uncoated reactive ion etched (RIE) facets
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; gallium compounds; indium compounds; light emitting diodes; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; 2.2 mW; 20 mA; 300 K; 4.5 percent; 420 nm; Al2O3; InGaN-GaN; InGaN/GaN; MOCVD growth; MQW; X-ray diffraction; active region; blue LED; blue laser diodes; c-plane sapphire substrates; external quantum efficiency; forward current; high-brightness LED; layers; multiple quantum well; optical properties; p-n diode; photoluminescence; room temperature pulsed operation; structural properties; threshold current density; uncoated RIE facets; Diode lasers; Gallium nitride; Light emitting diodes; MOCVD; Optical diffraction; Quantum well devices; Quantum well lasers; Stimulated emission; X-ray diffraction; X-ray lasers;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711656
