The thickness effect of SiOx layer in CIGS thin-film solar cells fabricated on stainless-steel substrate

Author

Chung, Y.D. ; Cho, D.H. ; Han, W.S. ; Park, N.M. ; Lee, K.S. ; Oh, S.Y. ; Kim, J.

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2010

fDate

20-25 June 2010

Abstract

We have investigated the thickness effect of SiO_x layer in the CIGS thin-film solar cells fabricated on stainless-steel substrate. After a SiO_x layer with a thickness of 1 or 2-μm was deposited on the substrate by using plasma-enhanced chemical vapor deposition, Na-doped Mo layer and Mo layer were coated on it. A CIGS thin-film solar cell on the stainless-steel substrate without the SiO_x layer showed an efficiency of 7.47 %, the solar cell with the 1 μm-thick SiO_x showed an efficiency of 11.82 %, and the solar with the 2 μm-thick SiO_x showed the efficiency of 12.43%. The efficiency of CIGS solar cell with 2 μm-thick SiO_x was higher than those of others with the thinner SiO_x barrier.

Keywords

plasma CVD; silicon compounds; solar cells; stainless steel; substrates; CIGS thin-film solar cells; SiO; plasma-enhanced chemical vapor deposition; stainless-steel substrate; thickness effect; Dielectrics; Fabrication; Photovoltaic cells; Photovoltaic systems; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5614680

Filename

5614680