• DocumentCode
    2741609
  • Title

    Selenization pathways to 2SSS CIGS manufacturing

  • Author

    Jayadevan, K. ; Anders, R. ; Zafar, S. ; Ferekides, C.S. ; Morel, D.L.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    In spite of the highly successful development of CIGS at the laboratory level, successful commercialization of the technology has not yet been demonstrated. This is largely due to limited understanding and control of the growth mechanisms. We have developed extensive understanding of these mechanisms for all solid state processing of CIGS(This is a 2-step process which we designate as 2SSS) and are currently using this understanding to guide the development of a CIGS pilot line with square foot area capability. In this paper we focus on the selenization mechanisms which are critical to overall performance and manufacturability. While for manufacturing purposes we employ the 2SSS process, we also use co-deposition to assist understanding. For all processes we find an interrelationship between Se and Ga incorporation. This impacts both materials utilization and film performance. With our novel 2SSS process we can exercise better control over the underlying mechanisms and better optimize the materials utilization/performance tradeoff. This also enables the use of deposition pathways that result in better performance and yield at the manufacturing level that might not be utilized because of excessive Se and/or Ga waste.
  • Keywords
    gallium; manufacturing processes; selenium; solar cells; 2SSS CIGS manufacturing; CIGS pilot line; deposition pathways; materials utilization/performance tradeoff; selenization pathways; solar cells; square foot area capability; Copper; Films; Gallium; Manufacturing; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5614684
  • Filename
    5614684