DocumentCode :
2741621
Title :
Fabrication of Very Large Area of Sub-100 nm Nanopillars Using Nanosphere Lithography
Author :
Chang, Shih-Hsin ; Hao, Yaowu
Author_Institution :
Mater. Sci. & Eng. Dept., Univ. of Texas at Arlington, Arlington, TX
fYear :
2008
fDate :
18-21 Aug. 2008
Firstpage :
855
Lastpage :
856
Abstract :
Nanosphere lithography is a method that can produce large area, size-tunable patterns with high throughput and low cost. Here, large area arrays of sub-100 nm pillars were generated using the combination of nanosphere lithography and reactive ion etching techniques. Instead of directly using polystyrene particles as masks, which is soft and degradable during the etching process, we use chromium as hard mask to fabricated large area silicon or silica pillars.
Keywords :
elemental semiconductors; masks; nanolithography; silicon; silicon compounds; sputter etching; Si; SiO2; chromium; nanopillar fabrication; nanosphere lithography; polystyrene mask particles; reactive ion etching techniques; silicon; size-tunable patterns; Chromium; Degradation; Electron beams; Etching; Fabrication; Lithography; Nanostructures; Self-assembly; Silicon compounds; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
Type :
conf
DOI :
10.1109/NANO.2008.255
Filename :
4617237
Link To Document :
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