Title :
Fabrication of Very Large Area of Sub-100 nm Nanopillars Using Nanosphere Lithography
Author :
Chang, Shih-Hsin ; Hao, Yaowu
Author_Institution :
Mater. Sci. & Eng. Dept., Univ. of Texas at Arlington, Arlington, TX
Abstract :
Nanosphere lithography is a method that can produce large area, size-tunable patterns with high throughput and low cost. Here, large area arrays of sub-100 nm pillars were generated using the combination of nanosphere lithography and reactive ion etching techniques. Instead of directly using polystyrene particles as masks, which is soft and degradable during the etching process, we use chromium as hard mask to fabricated large area silicon or silica pillars.
Keywords :
elemental semiconductors; masks; nanolithography; silicon; silicon compounds; sputter etching; Si; SiO2; chromium; nanopillar fabrication; nanosphere lithography; polystyrene mask particles; reactive ion etching techniques; silicon; size-tunable patterns; Chromium; Degradation; Electron beams; Etching; Fabrication; Lithography; Nanostructures; Self-assembly; Silicon compounds; Throughput;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.255