Title :
Comparative low frequency noise analysis in various SOI devices: floating body, body-tied, DTMOS with and without current limiter
Author :
Haendler, S. ; Jomaah, J. ; Balestra, F. ; Pelloie, J.L.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
Low frequency noise (LFN) in N-channel floating-body, body-tied and dynamic threshold (DTMOS) devices on Unibond SOI substrates is investigated. The LFN is analyzed in both ohmic and saturation regions. We show that the DTMOS transistors present the best behavior in term of noise compared to the other investigated devices
Keywords :
1/f noise; MOSFET; current limiters; semiconductor device measurement; semiconductor device noise; silicon-on-insulator; DTMOS transistors; N-channel MOSFETs; SOI devices; Si-SiO2; Unibond SOI substrates; body-tied MOS devices; current limiter; dynamic threshold MOS devices; floating-body MOS devices; low frequency noise; low frequency noise analysis; noise; ohmic region; saturation region; CMOS technology; Circuit noise; Current limiters; Fluctuations; Low-frequency noise; MOSFETs; Semiconductor films; Transconductance; Voltage; Wireless communication;
Conference_Titel :
SOI Conference, 2000 IEEE International
Conference_Location :
Wakefield, MA
Print_ISBN :
0-7803-6389-2
DOI :
10.1109/SOI.2000.892802
