Title :
Ion implanted GaAs/InGaAs lateral injection ridge QW laser for OEICs: study of operation mechanisms
Author :
Tager, A.A. ; Gaska, R. ; Avrutsky, I.A. ; Fay, M. ; Chik, H. ; Springthorpe, A. ; Husain, Z. ; Xu, J.M. ; Shu, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
We have fabricated and characterized lateral current injection (LCI) ridge-waveguide lasers with implanted contacts. Comprehensive optical and electrical measurements have been performed over a wide temperature range (10 K to 300 K) on two sets of lasers with differing ridge widths and active region structures. Several new phenomena unique to the LCI mechanism have been observed and explained, including a positive differential resistance kink at threshold, and an inverse temperature-dependence of quantum efficiency and threshold current at cryogenic values. Electron/hole mobility disparity, local carrier nonpinning above threshold due to photon-assisted carrier diffusion, and intrinsically higher current densities have been experimentally identified as the major factors governing LCI laser characteristics. The results have important implications for optimum LCI laser design and ultimate performance
Keywords :
III-V semiconductors; carrier lifetime; carrier mobility; charge injection; current density; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; quantum well lasers; ridge waveguides; semiconductor quantum wells; waveguide lasers; 10 to 300 K; GaAs-InGaAs; GaAs/InGaAs; OEIC; active region structure; current density; electrical measurements; electron/hole mobility disparity; implanted contacts; ion implanted lateral injection ridge QW laser; lateral current injection ridge-waveguide lasers; local carrier nonpinning; operation mechanisms; optical measurements; photon-assisted carrier diffusion; positive differential resistance kink; quantum efficiency; ridge width; temperature dependence; threshold current; Contacts; Electric resistance; Electric variables measurement; Electrical resistance measurement; Gallium arsenide; Indium gallium arsenide; Particle beam optics; Performance evaluation; Temperature distribution; Threshold current;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711668
