Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers

Author

Pan, Jen-Wei ; Chyi, Jen-Inn ; Tu, Yuan-Kuang ; Liaw, Jy-Wang

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

fYear

1997

fDate

8-11 Sep 1997

Firstpage

401

Lastpage

404

Abstract

The optical confinement factor, far-field angle, and threshold current of 1.3 μm AlGaInAs/InP separate confinement heterostructure (SCH) laser with two-stack AlInAs-(AlGa)InAs multiquantum barriers (MQB) are theoretically studied. The internal quantum efficiency for the laser with MQB is decreased by 13% in contrast to 24% for the laser without MQB in the temperature range of 298-348 K. The characteristic temperature can be improved by 10 K. Experimental results for the 1.3 μm AlGaInAs/InP laser with MQB are also presented and compared

Keywords

aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; 1.3 mum; 298 to 348 K; AlGaInAs-InP; AlGaInAs/InP quantum well lasers; SCH laser; characteristic temperature; far-field angle; internal quantum efficiency; multi-stack multiquantum barrier; optical confinement factor; separate confinement heterostructure; threshold current; Artificial intelligence; Charge carrier processes; Electron mobility; Electron optics; Indium phosphide; Laser theory; Quantum well lasers; Reflectivity; Temperature distribution; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711671

Filename

711671